3/16 2017IEDMに見るメモリー技術最新の動向
Following the opening plenaries, Monday’s technical sessions at IEDM 2017 included Session 2: Memory Technology – ReRAM & Selectors. Papers include:
Paper 2.1 –… Breakthrough of Selector Technology for Cross-point 25nm ReRAM, S. G. Kim, et al, SK Hynix / Paper 2.2 – An Ultra High Endurance and Thermally Stable Selector based on TeAsGeSiSe Chalcogenides Compatible with BEOL IC Integration for Cross-Point PCM, H. Y. Cheng, et al, Macronix / Paper 2.3 – In-Depth iInvestigation of Programming & Reading Operations in RRAM Cells Integrated with Ovonic Threshold Switching (OTS) Selectors, M. Alayan, et al, CEA, LETI / Paper 2.4 – BEOL Based RRAM with One Extra-mask for Low Cost, Highly Reliable Embedded Application in 28 nm Node and Beyond, H. Lv, et al, Chinese Academy of Sciences / Paper 2.5 – A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large Array, Y.-H. Lin, et al, Macronix / Paper 2.6 – Integrated HfO2-RRAM to Achieve Highly Reliable, Greener, Faster, Cost-Effective, and Scaled Devices, C.H. Ho, et al, Winbond Electronics / Paper 2.7 – 8-layers 3D Vertical RRAM with Excellent Scalability towards Storage Class Memory Applications, Q. Luo, et al, Chinese Academy of Sciences http://ow.ly/uQt830h3HBj
